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  www.littelfuse.com ?2008 littelfuse 190 power thyristor databook teccor ? brand thyristors silicon controlled recti?ers sx02xs ev series 1.5 amp sensitive scrs a k g sx02xs ev series 1.5 amp sensitive scr description applications main features features new 1.5amp sensitive gate scr series offers high static dv/dt with low turn off time (tq) through small die planar construction design. all scrs junctions are glass- passivated to ensure long term reliability and parametric stability. the sx02xs ev series is speci?cally designed for gas ignition applications that require high pulse surge current capability. symbol value unit i t(rms) 1. 5 a v drm /v rrm 400 to 600 v i gt 200 a absolute maximum ratings symbol parameter value unit i t(rms) rms on-state current (full sine wave) to-92 t c = 65c 1. 5 a sot-223 t l = 95c i t(av) average on-state current to-92 t c = 65c 0.95 a sot-223 t c = 95c i tsm non repetitive surge peak on-state current (single cycle, t j initial = 25c) to-92 sot-223 f = 50 hz 12.5 a f = 60 hz 15.0 i 2 ti 2 t value for fusing t p = 10 ms f = 50 hz 0.78 a 2 s t p = 8.3 ms f = 60 hz 0.93 di/dt critical rate of rise of on-state current ig = 10ma to-92 sot-223 t j = 125c 50 a/s i gm peak gate current t p = 10 s t j = 125c 1. 0 a p g(av) average gate power dissipation t j = 125c 0.1 w t stg storage junction temperature range -40 to 150 c t j operating junction temperature range -40 to 125 schematic symbol t 3p)4dpnqmjbou t 5isvipmfboetvsgbdf mount packages t 4vshf capability > 15amps t #mpdljohwpmubhf (v drm / v rrm ) capability up to 600v t )jhieweuopjtfjnnvojuz t *nqspwfeuvsopgg time (tq) < 35 sec. t 4fotjujwfhbufgpsejsfdu microprocessor interface
191 www.littelfuse.com ?2008 littelfuse power thyristor databook teccor ? brand thyristors silicon controlled recti?ers sx02xs ev series 1.5 amp sensitive scrs electrical characteristics (t j = 25c, unless otherwise speci?ed) static characteristics (t j = 25c, unless otherwise speci?ed) symbol description test conditions sx02xs unit min max i gt dc gate trigger current v d = 12v r l = 60 15 200 a v gt dc gate trigger voltage 0.8 v v grm peak reverse gate voltage i rg = 10a 5 v i h holding current r gk = 1 k 5 ma (dv/dt)s critical rate-of-rise of off-state voltage t j = 125c v d = v drm / v rrm exponential waveform r gk = 1 k 25 v/s t q turn-off time t j = 125c @ 600 v r gk = 1 k 35s t gt turn-on time i g = 10ma pw = 15sec i t = 3.0a (pk) 3s symbol description test conditions value unit min max v tm peak on-state voltage i tm = 3.0a (pk) 1.70 v i drm off-state current, peak repetitive t j = 25c @ v d = v drm r gk = 1 k 5a t j = 125c @ v d = v drm r gk = 1 k 500a thermal resistances symbol description test conditions value unit r th(j-c) junction to case (ac) i t = 1.5a (rms) 1 to-92 50 c/w sot-223 25 r th(j-a) junction to ambient i t = 1.5a (rms) 1 to-92 160 c/w sot-223 60 1 60hz ac resistive load condition, 100% conduction.
www.littelfuse.com ?2008 littelfuse 192 power thyristor databook teccor ? brand thyristors silicon controlled recti?ers sx02xs ev series 1.5 amp sensitive scrs figure 2: normalized dc holding current vs. junction temperature 
 
    -40 -25 -10 +5 +20 +35 +50 +65 +80 0.0 0.5 1.0 1.5 2.0 +95  +125 +110      figure 5: maximum allowable case temperature vs. on-state current 0.0 0.5 1.0 50 rms on-state current [i ] (amps) max allowable case temperature, t (celsius) c 1.5 60 70 80 90 100 110 120 130 sot-223 to-92 t (rms) current waveform: sinusoidal load: resistive or inductive conduction angle: 180 o case temperature: measured as shown on dimensional drawings figure 3: normalized dc gate trigger voltage vs. junction temperature (v gt @ t j / v gt @ 2 5 oc) -40 -25 -10 +5 +20 +35 +50 +65 +80 +95 +110 +125 0.5 1. 0 1. 5 normalized gate: trigger voltage junction temperature (t j ) c figure 1: normalized dc gate trigger current vs. junction temperature -40 -10 +20 +50 +80 0.0 0.5 1. 0 1. 5 2.0 junction temperature (t j ) c +95 normalized gate: trigger current i gt @ t j / i gt @ 2 5 oc +65 +35 +5 -25 +125 +110 2.5 0.0 0.5 1.0 0.0 average power dissipation, p (watts) d 1. 5 0.5 1. 0 1. 5 t (rms) rms on-state current [i ] (amps) current waveform: sinusoidal load: resistive or inductive conduction angle: 180 o figure 4: power dissipation (typical) vs. rms on-state current
193 www.littelfuse.com ?2008 littelfuse power thyristor databook teccor ? brand thyristors silicon controlled recti?ers sx02xs ev series 1.5 amp sensitive scrs soldering parameters re?ow condition pb C free assembly pre heat - temperature min (t s(min) ) 150c - temperature max (t s(max) ) 200c - time (min to max) (t s ) 60 C 180 secs average ramp up rate (liquidus temp) (t l ) to peak 5c/second max t s(max) to t l - ramp-up rate 5c/second max re?ow - temperature (t l ) (liquidus) 217c - time (min to max) (t s ) 60 C 150 seconds peak temperature (t p ) 260 +0/-5 c time within 5 c of actual peak temperature (t p ) 20 C 40 seconds ramp-down rate 5c/second max time 2 5 c to peak temperature (t p ) 8 minutes max. do not exceed 280c 123 45 6 7 8 9 10 20 30 40 60 80 100 200 300 400 600 1000 2 3 4 5 6 7 8 9 10 12 15 20 1.5 a devices surge current duration C full cycle 1 peak surge (non-repetitive) on-state current (i tsm ) C amps. figure 6: surge peak on-state current vs. number of cycles supply frequency: 60hz sinusoidal load: resistive rms on-state current [i t(rms) ]: max rated value at speci?c case temperature notes: 1. gate control may be lost during and immediately following surge current interval. 2. overload may not be repeated until junction temperature has returned to steady-state rated value.
www.littelfuse.com ?2008 littelfuse 194 power thyristor databook teccor ? brand thyristors silicon controlled recti?ers sx02xs ev series 1.5 amp sensitive scrs physical speci?cations environmental speci?cations dimensions to-92 dimensions inches millimeters min typ max min typ max a 0.175 0.205 4.450 5.200 # 0.170 0.210 4.320 5.330 c 0.500 12.700 d 0.135 0.165 3.430 4.190 e 0.125 0.165 3.180 4.190 f 0.080 0.095 0.105 2.040 2.400 2.660 g 0.016 0.021 0.407 0.533 h 0.045 0.050 0.055 1.150 1.270 1.390 i 0.095 0.100 0.105 2.420 2.540 2.660 j 0.015 0.020 0.380 0.500 test speci?cations and conditions ac blocking mil-std-750, m-1040, cond a applied peak ac voltage @ 125c for 1008 hours temperature cycling mil-std-750, m-1051, 100 cycles; -40c to +150c; 15-min dwell-time temperature/ humidity eia / jedec, jesd22-a101 1008 hours; 320v - dc: 85c; 85% rel humidity high temp storage mil-std-750, m-1031, 1008 hours; 150c low-temp storage 1008 hours; -40c thermal shock mil-std-750, m-1056 10 cycles; 0c to 100c; 5-min dwell- time at each temperature; 10 sec (max) transfer time between temperature autoclave eia / jedec, jesd22-a102 168 hours (121c at 2 atms) and 100% r/h resistance to solder heat mil-std-750 method 2031 solderability ansi/j-std-002, category 3, test a lead bend mil-std-750, m-2036 cond e terminal finish 100% matte tin-plated. body ul recognized epoxy meeting ?ammability classi?cation 94v-0. lead material copper alloy design considerations careful selection of the correct device for the applications operating parameters and environment will go a long way toward extending the operating life of the thyristor. good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. correct mounting, soldering, and forming of the leads also help protect against component damage.
195 www.littelfuse.com ?2008 littelfuse power thyristor databook teccor ? brand thyristors silicon controlled recti?ers sx02xs ev series 1.5 amp sensitive scrs packing options dimensions C sot-223 dimensions inches millimeters min typ max min typ max a 0.248 0.256 0.264 6.30 6.50 6.70 # 0.130 0.138 0.146 3.30 3.50 3.70 c 0.071 1.80 d 0.001 0.004 0.02 0.10 e 0.114 0.118 0.124 2.90 3.00 3.15 f 0.024 0.027 0.034 0.60 0.70 0.85 g 0.090 2.30 h 0.181 4.60 i 0.264 0.276 0.287 6.70 7.00 7.30 j 0.009 0.010 0.014 0.24 0.26 0.35 k 10 max part number marking weight packing mode base quantity sx02es sx02es 0.170 g #vml 2500 sx02esap sx02es 0.170 g ammo pack 2000 sx02esrp sx02es 0.170 g tape & reel 2000 sx02tsrp sx02ts 0.120 g tape & reel 1000 note: x = voltage dimensions in millimeters (inches) 1.5 (0.059) 1.5 (0.059) 3.3 (0.130) 6.4 (0.252) 4.6 (0.181) 1.2 (0.047) 2.3 (0.091) (3x) pad layout for sot-223 product selector part number voltage gate sensitivity package 400v 600v s402es x 200a to-92 s602es x 200a to-92 s402ts x 200a sot-223 S602TS x 200a sot-223
www.littelfuse.com ?2008 littelfuse 196 power thyristor databook teccor ? brand thyristors silicon controlled recti?ers sx02xs ev series 1.5 amp sensitive scrs to-92 (3-lead) reel pack (rp) radial leaded meets all eia-468-b 1994 standards 0.708 (18.0) 1.6 (41.0) 0.5 (12.7) 0.1 (2.54) 0.2 (5.08) 0.236 (6.0) 0.02 (0.5) direction of feed dimension s are in inches (and millimeters). 1.97 (50.0) 14.17(360.0) flat up 1.26 (32.0) 0.098 (2.5) max mt1 / cathode mt2 / anode gate 0.354 (9.0) 0.157 dia (4.0) to-92 (3-lead) ammo pack (ap) radial leaded meets all eia-468-b 1994 standards flat down 25 devices per fold mt1 / cathod e mt2 / anode gate direct ion of feed dimensions are in inches (and millimeters). 0.708 (18.0) 1.62 (41.2) 0.5 (12.7) 0.1 (2.54) 0.2 (5.08) 0.236 (6.0) 0.02 (0.5) 1.85 (47.0) 13.3 (338.0) 1.27 (32.2) 0.098 (2.5) max 12.2 (310.0) 1.85 (47.0) 0.354 (9.0) 0.157 dia (4.0)
197 www.littelfuse.com ?2008 littelfuse power thyristor databook teccor ? brand thyristors silicon controlled recti?ers sx02xs ev series 1.5 amp sensitive scrs scr series x 02 s x voltage 4 : 400v 6: 600v sensitivity s: 200a sensitive scr xx packing type blank: bulk rp: reel pack (to-92) : embossed carrier pack (sot-223) ap: ammo pack (to-92) current 02: 1.5a package type e: to-92 t: sot-223 xx part numbering system part marking system date code (2 digits min.) number = year letter = month dc tape & reel speci?cations for sot-223 4 mm 8 mm 1.5 mm 13 mm abor hole diameter 180 mm 13.4 mm 2 mm 12 mm k / mt1 gate a / mt2 a / mt2 5.5 mm 1.75 mm


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